Kexin Electronics C2611
NPN Power Transistor
FEATURES
● Collector-emitter Voltage: V(BR)CEO=400V● Collector Current: IC=0.2A C2611 SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 123 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.1 2.50 -0.1 +0.1 4.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.1 0.80 -0.1 +0.1 2.60 -0.1 +0.1 0.40 -0.1 3.00+0.1 -0.1 1. Base 2. Collector 3. Emiitter
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 0.2 A Collector Dissipation PC 0.5 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Fall time Storage time Transition frequency Symbol Testconditons V(BR)CBO IC = 100μA , IE = 0 V...