Part C2611
Description TRANSISTOR
Category Transistor
Manufacturer Jiangsu Changjiang Electronics
Size 227.95 KB
Jiangsu Changjiang Electronics
C2611

Overview

  • BASE Collector-base voltage V(BR)CBO : 600
  • EMITTER 1 2 3 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10mA VCE= 20 V, I C=20mA Transition frequency 5 0.5 1.2 V V unless Test otherwise MIN specified£©