C2611 Datasheet

The C2611 is a 2SC2611.

Datasheet4U Logo
Part NumberC2611
ManufacturerHitachi Semiconductor
Overview 2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta. current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characteristics .
Part NumberC2611
DescriptionNPN Power Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Transistors NPN Power Transistor ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A C2611 SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 123 0.48+0.1 -0.1 0.53+0.1.
* Collector-emitter Voltage: V(BR)CEO=400V
* Collector Current: IC=0.2A C2611 SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 123 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.1 2.50 -0.1 +0.1 4.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.1 0.80 -0.1 +0.1 2.60 -0.1 +0.1 0.40 -0.1 3.00+0.1 -0.1 1. Base 2. Collect.
Part NumberC2611
DescriptionTRANSISTOR
ManufacturerJiangsu Changjiang Electronics
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO¡ª 92 C2611 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSIST. Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSISTOR£¨NPN £© W£¨ Tamb=25¡æ£© A 1. BASE 2.COLLECTOR Collector-base voltage V(BR)CBO : 600 3. EMITTER 1 2 3 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Par.
Part NumberC2611
DescriptionPlastic-Encapsulated Transistors
ManufacturerTRANSYS Electronics
Overview Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors C 2611 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) . Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base .