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CZT3055 - NPN Silicon Power Transistor

Key Features

  • High current (max. 6A). Low voltage (max. 60V). Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCER.

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Other Datasheets by Kexin Semiconductor

Part Number Description
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055(CZT3055) SOT-223 6.50 +0.2 -0.2 Transistors IC Features High current (max. 6A). Low voltage (max. 60V). Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO IC IB PD R JA Rating 100 70 60 7 6 3 2 62.