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F501 - Silicon N-Channel Power MOSFET

Key Features

  • s.
  • VDS (V) = 500V.
  • ID = 0.03 A (VGS = 10V).
  • RDS(ON) ＜ 850 Ω (VGS = 10V).
  • RDS(ON) ＜ 750 Ω (VGS = 0V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipat.

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SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501 ■ Features ● VDS (V) = 500V ● ID = 0.03 A (VGS = 10V) ● RDS(ON) ＜ 850 Ω (VGS = 10V) ● RDS(ON) ＜ 750 Ω (VGS = 0V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Peak Diode Recovery dv/dt TA=25℃ Thermal Resistance.Junction- to-Ambient MaximumTemperature for Soldering Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD dv/dt RθJA TL TJ Tstg Rating 500 ±20 0.03 0.