Kexin Electronics F501
Silicon N-Channel Power MOSFET
| Part No. | F501 |
|---|---|
| Datasheet | F501 Download |
| Manufacturer | Kexin Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 500V● ID = 0.03 A (VGS = 10V)
● RDS(ON) ＜ 850 Ω (VGS = 10V)
● RDS(ON) ＜ 750 Ω (VGS = 0V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Peak Diode Recovery dv/dt TA=25℃ Thermal Resistance.Junction- to-Ambient MaximumTemperature for Soldering Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD dv/dt RθJA TL TJ Tstg Rating 500 ±20 0.03 0.024 0.12 0.5 5 250 300 150 -55 to 150 Unit V A W V/ns ℃/W ℃ 1 SMD Type Transistors Silicon N-Channel Power MOSFET (Depletion Mode) F501●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Off-state Drain to Source Current...
