Perfect Intelligent F501D
600V Depletion-Mode Power MOSFET
GENERAL FEATURES
● Proprietary Advanced Planar Technology● Depletion Mode (Normally On)
● ESD improved Capability
● Rugged Polysilicon Gate Cell Structure
● Fast Switching Speed
● RoHS Compliant
● Halogen-free available F501D BVDSX 600V RDS(ON),typ. 350Ω IDSS 12mA
APPLICATIONS
● Synchronous Rectification● Normally-on Switches
● Linear Amplifier, Converters
● Constant Current Source
● Telecom Ordering Information Part Number Marking F501D F501D Package SOT-23 Brand
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter F501D Unit VDSX VGS ID Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=70℃ 600 V ±20 0.030 0.025 A IDM Pulsed Drain Current [2] 0.120 VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5k Ω) 300 V PD Power Dissipation 0.5 W TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.