F501D - 600V Depletion-Mode Power MOSFET

Perfect Intelligent

Key Features

Proprietary Advanced Planar Technology.
Depletion Mode (Normally On).
ESD improved Capability.
Rugged Polysilicon Gate Cell Structure.
Fast Switching Speed.
RoHS Compliant.
Halogen-free available F501D BVDSX 600V RDS(ON),typ. 350Ω IDSS 12mA.

F501D 600v depletion-mode power mosfet by Perfect Intelligent - Datasheet Preview

Datasheet Details

Part number	F501D
Manufacturer	Perfect Intelligent
File Size	1.38 MB
Description	600V Depletion-Mode Power MOSFET
Datasheet	F501D Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
F501	Silicon N-Channel Power MOSFET	Kexin
F5019	Froide	CSF
F5001	RF POWER VDMOS TRANSISTOR	Polyfet RF Devices
F5001H	INTELIGENT POWER SWITCH	Fuji Electric
F5033	INTELLIGENT POWER MOSFET	Fuji Electric

Other Datasheets by Perfect Intelligent

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

600V Depletion-Mode Power MOSFET General Features  Proprietary Advanced Planar Technology  Depletion Mode (Normally On)  ESD improved Capability  Rugged Polysilicon Gate Cell Structure  Fast Switching Speed  RoHS Compliant  Halogen-free available F501D BVDSX 600V RDS(ON),typ. 350Ω IDSS 12mA Applications  Synchronous Rectification  Normally-on Switches  Linear Amplifier, Converters  Constant Current Source  Telecom Ordering Information Part Number Marking F501D F501D Package SOT-23 Brand Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter F501D Unit VDSX VGS ID Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=70℃ 600 V ±20 0.030 0.025 A IDM Pulsed Drain Current [2] 0.