Kexin Electronics FCX493
NPN Silicon Planar Medium Power Transistor
FEATURES
● BVCEO > 100V● IC = 1A high Continuous Current
● Low saturation voltage VCE(sat) < 300mV @ 250mA C B E
ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol Rating Unit VCBO 120 V VCEO 100 V VEBO 5 V IC 1 A ICM 2 A IB 200 mA Ptot 1 W Tj:Tstg -65 to 150 1 SMD Type Transistors NPN Silicon Planar Medium Power Transistor FCX493ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo Testconditons IC=100ì A IC=10mA* IE=...