Kexin Electronics FDB15N50
N-Channel SMPS Power MOSFET
FEATURES
Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness +0.2 8.7-0.2 +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Symbol VDSS VGSS ID Idp PD RèJA Tch Tstg Rating 500 30 15 60 300 2 62 175 -55 to +175 Unit V V A A W W/ /W Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature 5.60 1 Gate 2 Drain 3 Source Reduced rDS(ON) 1 SMD Type MOSFET KDB15N50(FDB15N50)ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Drain to...