Kexin Electronics FDB2552
N-Channel MOSFET
FEATURES
rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 SourceABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature Symbol VDSS VGSS ID PD RèJA Tch Tstg Rating 150 20 37 5 150 1.0 43 175 -55 to +175 Unit V V A A W W/ /W 1 SMD Type KDB2552(FDB2552)ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current Gate threshold voltage IGSS VGS(th) Drain to source on-state resistance RDS(on) Input capacita...