onsemi FDB2552
150V 37A N-Channel MOSFET
| Part No. | FDB2552 |
|---|---|
| Datasheet | FDB2552 Download |
| Manufacturer |  onsemi |
| Description | 150V 37A N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 32 mW (Typ.), VGS = 10 V, ID = 16 A● Qg(tot) = 39 nC (Typ.), VGS = 10 V
● Low Miller Charge
● Low QRR Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse)
● These Devices are Pb−Free, Halide Free and are RoHS Compliant
APPLICATIONS
● DC/DC Converters and Off−line UPS● Distributed Power Architectures and VRMs
● Primary Switch for 24 V and 48 V Systems
● High Voltage Synchronous Rectifier MOSFET
MAXIMUM RATINGS
(TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Current A Continuous (TC = 25°C, VGS = 10 V) 37 Continuous (TC = 100°C, VGS = 10 V) 26 Continuous (Tamb = 25°C, VGS = 10 V, 5 with RqJA = 43°C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation Derate above 25°C 390 mJ 150 W 1.0 W/°C TJ, TSTG Operating and Storage Temperature −55 to 175 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
