Kexin Electronics FMMT549
Medium Power Transistor
FEATURES
Low equivalent on-resistance. +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5 V ICM -2 A IC -1 A IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector 1 SMD Type TransistIoCrsELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * DC current gain * Current-gain-bandwidth product Output capacitance Switching times * Pulse test: tp 300 ìs; d 0.02.