Low equivalent on-resistance. Medium Power Transistor FMMT591 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1
ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -80 -60 -5 -2 -1 -200 500 -55 to +150 Unit V V V A A mA mW
ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Static Forward Current TransferRatio Current-gain-bandwidth product Output capacitance * Pulse test: tp 300 ìs; d 0.02. M
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy