FMMT597 Datasheet PDF

FEATURES

SOT23 PNP silicon planar High Voltage Transistor FMMT597 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -5 V ICM -1 A IC -0.2 A IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 1 SMD Type Transistors

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector-Emitter Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Static Forward Current Transfer Ratio Current-gain-bandwidth product Output capacitance * Pulse test: tp = 300 ìs; d 0.02.