FMMT597 Datasheet | Zetex Semiconductors

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 PLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -300 -300 -5 -1 -0.2 -200 500 -55 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.25 -0.25 -1.0 -0.85 100 100 100 75 10 300 n A n A n A V V V V IC=-100µ A IC=-10m A- IE=-100µ A VCB=-250V VEB=-4V VCES=-250V IC=-50m A, IB=-5m A IC=-100m A, IB=-20m A- IC=-100m A, IB=-20m A- IC=-100m A,VCE=-10V- IC=-1m A, VCE=-10V IC=-50m A,VCE=-10V- IC=-100m A,VCE=-10V- MHz IC=-50m A, VCE=-10V f=100MHz p F VCB=-10V, f=1MHz UNIT V V V A A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance VBE(on) h FE f T Cobo -300 -300 -5 - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 145 TYPICAL CHARACTERISTICS 0.6 0.4 0.4 0.3 0.2 0.1 0 1m A 10m A 100m A 1A I+/I- =10 I+/I- =50 +25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1m A 10m A 100m A 1A I+/I- =10 -55° C +25° C +100° C IC-Collector Current VCE(sat) v IC IC-Collector Current VCE(sat) v IC 320 240 160 80 V+-=10V +100° C 0.9 0.8 0.6 I+/I- =10 +25° C -55° C 0.4 0.2 0 -55° C +25° C +100° C 0 1m A 10m A 100m A 1A 1m A 10m A 100m A 1A IC-Collector Current h FE V IC IC-Collector Current VBE(sat) v IC 0.9 V+-=10V 0.8 0.6 0.4 0.2 0 -55° C +25° C +100° C 0.1 DC...