FMMT593 Datasheet | Zetex Semiconductors

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 7 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -120 -100 -5 -2 -1 -200 500 -55 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 100 100 100 50 50 5 300 n A n A n A V V V V IC=-100µ A IC=-10m A- IE=-100µ A VCB=-100V VEB=-4V VCES=-100V IC=-250m A,IB=-25m A- IC=-500m A IB=-50m A- IC=-500m A,IB=-50m A- IC=-1m A, VCE=-5V- IC=-1m A, VCE=-5V IC=-250m A,VCE=-5V- IC=-500m A, VCE=-5V- IC=-1A, VCE=-5V, MHz IC=-50m A, VCE=-10V f=100MHz p F VCB=-10V, f=1MHz UNIT V V V A A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) h FE -120 -100 -5 Transition Frequency Output Capacitance f T Cobo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% - 141 TYPICAL CHARACTERISTICS 0.4 0.3 0.2 0.1 0 + - I+/I- =50 I /I =10 +25 ° C 0.4 0.3 0.2 0.1 0 I /I =10 ) - -55 °C +25 °C +100 °C 1m A 10m A 100m A 1A 10A 1m A 10m A 100m A 1A 10A IC-Collector Current VCE(sat) v IC 400 300 200 100 IC-Collector Current VCE(sat) v IC +-=5V 1.0 0.8 0.6 0.4 I /I...