FMMT593
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3
- NOVEMBER 1995 PLEMENTARY TYPE FMMT493 PARTMARKING DETAIL
- 593 7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Emitter Saturation Voltages SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -120 -100 -5 -2 -1 -200 500 -55 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 100 100 100 50 50 5 300 n A n A n A V V V V IC=-100µ A IC=-10m A- IE=-100µ A VCB=-100V VEB=-4V VCES=-100V IC=-250m A,IB=-25m A- IC=-500m A IB=-50m A- IC=-500m A,IB=-50m A- IC=-1m A, VCE=-5V- IC=-1m A, VCE=-5V IC=-250m A,VCE=-5V- IC=-500m A, VCE=-5V- IC=-1A, VCE=-5V, MHz IC=-50m A, VCE=-10V f=100MHz p F VCB=-10V, f=1MHz UNIT V V V A A m A m W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat)...
