Kexin Electronics FMMT734
Power Darlington Transistor
FEATURES
625mW Power Dissipation Very high hFE at high current (5A) Extremely low VCE(sat) at high current (1A) +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Power dissipation Operating and storage temperature range Symbol Rating Unit VCBO -100 V VCEO -100 V VEBO -12 V IC -800 mA ICM -5 A Ptot 625 mW Tj,Tstg -55 to +150 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector 1 SMD Type TransistorsELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio* Transition Frequency Output Capacitance Turn-On Time Turn-Off Time * Pulse test: tp = 300 ìs; d 0.02.