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FMMT734 - PNP SILICON POWER DARLINGTON TRANSISTOR

Key Features

  • 625mW POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) COMPLEMENTARY TYPE – FMMT634 PARTMARKING DETAIL – 734 FMMT734 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -100 -100 -12 -5 -800 625 -55 to +150 SOT23 UNIT V V V A mA mW °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs.