FMMT734 Datasheet | Zetex Semiconductors

FEATURES - 625m W POWER DISSIPATION - Very High h FE at High Current (5A) - Extremely Low VCE(sat) at High Current (1A) PLEMENTARY TYPE - FMMT634 PARTMARKING DETAIL - 734 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -100 -100 -12 -5 -800 625 -55 to +150 SOT23 UNIT V V V A m A m W °C - Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm - - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. -100 TYP. -130 MAX. UNIT CONDITIONS. V I C=-100 µ A I C=-5m A- I E=-100 µ A V CB=-80V Collector-Base V (BR)CBO Breakdown Voltage Collector-Emitter V (BR)CEO Breakdown Voltage Emitter-Base V (BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage I CBO -100 -116 -12 -17 -10 n A I EBO -10 n A V EB=-7V I CES -200 n A V CES =-80V V CE(sat) -0.68 -0.72 -0.78 -0.86 -0.72 -0.90 -1.60 -0.75 -0.80 -0.86 -0.97 - -1.05 -1.75 V V V V V V V I C=-100m A, I B=-1m A- I C=-250m A,I B=-1m A- I C=-500m A, I B=-5m A- I C=-800m A, I B=-5m A- I C=-800m A, I B=-5m A †- I C=-1A, I B=-5m A- I C=-1A, I B=-5m A- Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) -1.30 -1.75 I C =-1A, V CE=-5V- h FE 20K 15K...