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FMMT734 - PNP SILICON POWER DARLINGTON TRANSISTOR

Key Features

  • 625mW POWER.

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Other Datasheets by Zetex (now Diodes Incorporated)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) COMPLEMENTARY TYPE – FMMT634 PARTMARKING DETAIL – 734 FMMT734 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -100 -100 -12 -5 -800 625 -55 to +150 SOT23 UNIT V V V A mA mW °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs.