FMMT734 Datasheet and Specifications PDF

SMD Type Transistors Power Darlington Transistor FMMT734 Features 625mW Power Dissipation Very high hFE at high current (5A) Extremely low VCE(sat) at high current (1A) +0.1 2.4 -0.1 SOT-23 2.9+0.

625mW Power Dissipation Very high hFE at high current (5A) Extremely low VCE(sat) at high current (1A) +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base volta.

Features  BVCEO > -100V  IC = -800mA High Continuous Collector Current  Darlington Transistor hFE > 20k @ 100mA for High Gain  High Gain Hold-Up to 5A  625mW Power Dissipation  Complementary Dar.

* BVCEO > -100V
* IC = -800mA High Continuous Collector Current
* Darlington Transistor hFE > 20k @ 100mA for High Gain
* High Gain Hold-Up to 5A
* 625mW Power Dissipation
* Complementary Darlington NPN Type: FMMT634
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Fre.

“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) CO.

* 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) COMPLEMENTARY TYPE
* FMMT634 PARTMARKING DETAIL
* 734 FMMT734 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Cu.