Kexin Electronics FMMTL717
Medium Power Transistor
FEATURES
Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 Unit V V V A A mA mW 1 SMD Type TransistIoCrsELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter ON voltage DC current gain Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time * Pulse test: tp 300 ìs; d 0.02.