Kexin Electronics FZT593
PNP Silicon High Voltage Transistor
FEATURES
PNP Silicon High Voltage Transistor FZT593 SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 CollectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg Rating -120 -100 -5 -2 -1 -200 2 -55 to +150 Unit V V V A A mA W 1 SMD Type Transistors FZT593ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Saturation Voltages Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) VBE(on) hFE fT Cobo Testcondi...