Datasheet4U Logo Datasheet4U.com

HSB276AS - Silicon Schottky Barrier Diode

Key Features

  • High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VRRM VR IO Tj T s tg V a lu e 5 3 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer Hitachi Semiconductor
HSB276AS Silicon Schottky Barrier Diode Renesas
HSB276S Silicon Schottky Barrier Diode for Balanced Mixer Hitachi Semiconductor
HSB276S Silicon Schottky Barrier Diode Renesas
HSB278S Silicon Schottky Barrier Diode for High Speed Switching Hitachi Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
HSB276S Silicon Schottky Barrier Diode
HSB88WA Silicon Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon Schottky Barrier Diode HSB276AS Diodes Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VRRM VR IO Tj T s tg V a lu e 5 3 30 125 -5 5 to + 1 2 5 U n it V V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1.