Renesas Electronics HSB276AS
Silicon Schottky Barrier Diode
| Part No. | HSB276AS |
|---|---|
| Datasheet | HSB276AS Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● HSB276AS which is interconnected in series configuration is designed for balanced mixer use.
● CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB276AS Laser Mark E8 Package Name CMPAK Package Code (Previous Code) PTSP0003ZB-A (CMPAK) Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00 Apr 06, 2005 page 1 of 4 Free Datasheet HSB276AS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VRRM VR *1 IO Tj Tstg Value 5 3 30 125 −55 to +125 Unit V V mA °C °CELECTRICAL CHARACTERISTICS
*1 (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability * 2 Symbol VR IR IF C ∆C — Min 3 — 35 — — 30 Typ — — — — — — Max — 50 — 0.90 0.10 — Unit V µA mA pF pF V Test...
