Kexin Electronics HSM83
Switching Diodes
FEATURES
● High reverse voltage. (VR = 250V)● Silicon Epitaxial Planar Diode for High Voltage Switching 3 +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 1 Anode 2 NC 3 Cathode
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage DC Blocking Voltage VRM 300 V VR 250 Average Rectified Output Current Peak Forward Surge Current Io 100 mA IFM 300 Non-Repetitive Peak Forward Surge Current (Note.1) IFSM 2 A Junction Temperature Storage Temperature range TJ 125 ℃ Tstg -55 to 125 Note.1: Value at duration of 10msec.●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Capacitance between terminals Reverse recovery time Symbol Test Conditions VR IR= 100 uA VF IF= 100 mA IR1 VR=250 V IR2 VR=300 V CT VR= 0 V, f= 1 MHz trr IF=IR=30mA,Irr=3mA, RL=100Ω Min Typ Max Unit...