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IRLR3410 - N-Channel MOSFET

Key Features

  • ƽ VDS = 100V; ID = 17A ƽ RDS(ON) İ 0.105¡ (VGS = 10V) ƽ Logic Level Gate Drive ƽ Ultra Low On-Resistance ƽ Advanced Process Technology ƽ Fast Switching ƽ Fully Avalanche Rated + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 + 0.15 5 .5 5 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain Ƶ Absolute Maximum Ratings.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET IRLR3410 TraMnOsiSsFtoErsT Ƶ Features ƽ VDS = 100V; ID = 17A ƽ RDS(ON) İ 0.105¡ (VGS = 10V) ƽ Logic Level Gate Drive ƽ Ultra Low On-Resistance ƽ Advanced Process Technology ƽ Fast Switching ƽ Fully Avalanche Rated + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 + 0.15 5 .5 5 -0.15 3.