K2111 - MOS Field Effect Transistor

Product Overview

Kexin

Part number	K2111
Manufacturer	Kexin
File Size	42.25 KB
Description	MOS Field Effect Transistor
Datasheet	K2111 Datasheet
Additional preview pages of the K2111 datasheet.

Low on-resistance RDS(on)=0.6 MAX. @VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation.
Channel temperature Storage temperature.
16 cm2X0.7mm,ceramic substrate used Symbol VDSS VGSS ID Idp PD Tch T.

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Published: Jul 29, 2016 |