KDD2572
KDD2572 is N-Channel PowerTrench MOSFET manufactured by Kexin Semiconductor.
Features r DS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26n C (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+0.15 1.50 -0.15
+0.15 0.50 -0.15
+0.28 1.50 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
Unit: mm
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 , VGS = 10V) Drain Current Continuous (TC = 100 , VGS = 10V) Drain Current Continuous(TC=100 ,VGS=10V,R JA=52 /W)) Single Pulse Avalanche Energy
- Power dissipation Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient to252 Thermal Resistance Junction to Ambient to252 ,1in2 copper pad area
- Starting TJ = 25 , L = 0.2 m H, IAS = 19A.
Symbol VDSS VGS
EAS PD PD TJ, TSTG R JC R JA R JA
Rating 150 20 29 20
36 135 0.9 -55 to 175 1.11 100
Unit V V A A A m J W
W/
/W /W /W
.kexin..cn 1
SMD Type
Transist Io Crs
Electrical Characteristics Ta = 25
Parameter Drain to Source Breakdown Voltage
Zero Gate Voltage Drain...
