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KDD2572 - N-Channel PowerTrench MOSFET

Key Features

  • rDS(ON) = 45m (Typ. ), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ. ), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.28 1.50 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Unit: mm 1. Gate 2. Drain 3. Source 3.80 Absolute Maximum Ratings Ta = 25 Parame.

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SMD Type TransistIoCrs N-Channel PowerTrench MOSFET KDD2572 Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.28 1.50 -0.1 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Unit: mm 1. Gate 2. Drain 3. Source 3.