KDD3670 Datasheet | Kexin Semiconductor

Features 34 A, 100 V. RDS(ON) = 32m @ VGS = 10 V RDS(ON) = 35m @ VGS = 6 V Low gate charge (57 n C typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power dissipation @ TC=25 (Note 1) Power dissipation @ Ta=25 (Note 1a) Power dissipation @ Ta=25 (Note 1b) Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Symbol VDSS VGS ID TJ, TSTG R JC R JA Rating 100 20 34 100 83 3.8 1.6 -55 to 175 1.8 96 Unit V V A A /W /W .kexin..cn 1 SMD Type Transist Io Crs Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source...