KI009P Datasheet | Kexin Semiconductor

Features ƽ VDS (V) =-12V ƽ ID =-4 A ƽ RDS(ON) ˘ 52mȍ (VGS =-4.5V , ID=-4A) ƽ RDS(ON) ˘ 87m ȍ (VGS =-2.5V , ID=-3A) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction Storage Temperature Range Symbol Rating Unit -12 ±12 ć Tstg -55 to 150 Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward...