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KI8810DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 6 A.
  • RDS(ON) ＜ 22mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 30mΩ (VGS = 2.5V) D.
  • ESD protected G +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 S 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Pow.

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SMD Type N-Channel MOSFET KI8810DS ■ Features ● VDS (V) = 20V ● ID = 6 A ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) ● RDS(ON) ＜ 30mΩ (VGS = 2.5V) D ● ESD protected G +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 S 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating 20 ±8 6 5.3 25 1.