KON6512 Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 30 V ƽ IDMAX (at VGS = 10 V) = 150 A ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ S ƽ Low Gate Charge S ƽ High Current Capability DFN5x6-8(PDFNWB5x6-8L) Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 m H C TC=25ć TC=100ć TA=25ć 54 IDSM TA=25ć 123 m J VDS Spike 100ns VSPIKE Power Dissipation B TC=25ć TC=100ć Power Dissipation A TA=25ć TA=70ć 7.4 PDSM Thermal Resistance.Junction- to-Ambient A t İ...