KON6516 Datasheet | Kexin Semiconductor

Features - VDS (V) = 30 V - IDMAX (at VGS = 10 V) = 32 A - RDS(ON) (at VGS = 10 V) < 5 mΩ - RDS(ON) (at VGS = 4.5 V) < 8 mΩ - Low Gate Charge - High Current Capability DFN5x6-8(PDFNWB5x6-8L) - Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche Energy L = 0.05 m H C VDS Spike Power Dissipation B Power Dissipation A Thermal Resistance.Junction- to-Ambient A Thermal Resistance.Junction- to-Ambient A D Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TC=25℃ TC=100℃ TA=25℃ TA=70℃ 100ns TC=25℃ TC=100℃ TA=25℃ TA=70℃ t ≤ 10s Steady-State Steady-State Symbol VDS VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM Rth JA Rth JC TJ Tstg Rating 30 ±20 32 25 127 27 22 34 29 36 25 10 6 3.8 21 53 5 150 -55 to 150 Unit V A m J V W ℃/W ℃ .kexin..cn 1 SMD Type Tra Mn Osi Sst Fo Ers T N-Channel MOSFET AON6516 (KON6516) - Electrical Characteristics (TJ = 25℃ unless othewise specified) Parameter Symbol Test...