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KRC110S - NPN Transistors

Key Features

  • s.
  • With Built in Bias Resistors.
  • Simplify Circuit Design.
  • Reduce a Quantity of Parts and Manufaturing Process.
  • Digital Transistors C R1 B +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 E.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Cu.

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📁 Similar Datasheet

Part Number Description Manufacturer
KRC110S (KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR Korea Electronics
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KRC111M (KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR Korea Electronics

Other Datasheets by Kexin Semiconductor

Part Number Description
KRC111S NPN Transistors
KRC112S NPN Transistors
KRC113S NPN Transistors
KRC114S NPN Transistors
KRC116S NPN Transistors

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SMD Type Transistors NPN Transistors KRC110S ~ KRC114S ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design ● Reduce a Quantity of Parts and Manufaturing Process ● Digital Transistors C R1 B +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 50 50 5 100 200 150 -55 to 150 Unit V mA mW ℃ www.kexin.com.