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KRC116S - NPN Transistors

Key Features

  • s.
  • With Built in Bias Resistors.
  • Simplify Circuit Design.
  • Reduce a Quantity of Parts and Manufaturing Process.
  • Digital Transistors +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 1.IN 2.Common 3.OUT OUT R1 IN R2 COMMON.
  • Absolute Maximum Ratings Ta = 25℃ Output Voltage Parameter Input Voltage Output Current Power Dissipation Junction Temperatu.

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📁 Similar Datasheet

Part Number Description Manufacturer
KRC116S (KRC116S - KRC122S) EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics
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KRC110M (KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR Korea Electronics
KRC110S (KRC110S - KRC114S) EPITAXIAL PLANAR PNP TRANSISTOR Korea Electronics

Other Datasheets by Kexin Semiconductor

Part Number Description
KRC110S NPN Transistors
KRC111S NPN Transistors
KRC112S NPN Transistors
KRC113S NPN Transistors
KRC114S NPN Transistors

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SMD Type Transistors NPN Transistors KRC116S ~ KRC122S ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design ● Reduce a Quantity of Parts and Manufaturing Process ● Digital Transistors +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 1.IN 2.Common 3.OUT OUT R1 IN R2 COMMON ■ Absolute Maximum Ratings Ta = 25℃ Output Voltage Parameter Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Range KRC116S KRC117S KRC118S KRC119S KRC120S KRC121S KRC122S Symbol VO VI IO PD TJ Tstg Rating 50 10,-5 12,-10 12,-5 20,-7 30,-10 40,-15 40,-10 100 200 150 -55 to 150 Unit V mA mW ℃ www.kexin.com.