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KRF7601 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation Ta = 25.
  • 1 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt.
  • 1 Junction and Storage Temperature Range Junction-to-Ambient.
  • 2.

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SMD Type HEXFET Power MOSFET KRF7601 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 *1 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 3.8A, di/dt 96A/ s, VDD V(BR)DSS,TJ *2 Surface mounted on FR-4 board, t 10sec. Symbol ID ID IDM PD VGS dv/dt TJ, TSTG R JA 150 Rating 5.7 4.6 30 1.8 14 12 5 -55 to + 150 70 Unit A W W/ V V/ns /W www.kexin.com.