KRF7601 Datasheet | Kexin Semiconductor

Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current- 1 Power Dissipation Ta = 25 - 1 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt- 1 Junction and Storage Temperature Range Junction-to-Ambient - 2 - ISD 3.8A, di/dt 96A/ s, VDD V(BR)DSS,TJ - 2 Surface mounted on FR-4 board, t 10sec. Symbol ID ID IDM PD VGS dv/dt TJ, TSTG R JA 150 Rating 5.7 4.6 30 1.8 14 12 5 -55 to + 150 70 Unit W W/ V V/ns /W .kexin..cn 1 SMD Type ICIC Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Body Diode) Symbol Testconditons V(BR)DSS VGS = 0V, ID = 250 A V(BR)DSS/ TJ ID = 1m A,Reference to 25 RDS(on) VGS = 4.5V, ID = 3.8A- 1 VGS = 2.7V, ID =1.9A- 1 VGS(th) VDS = VGS, ID = 250 A gfs VDS = 10V, ID = 1.9A- 1 IDSS VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ =...