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KRF7663 - Power MOSFET

Key Features

  • Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Ta= 25 PD Power Dissipation @Ta= 70 Linear Derating Factor Single Pulse Avalanche Energy.
  • 2 EAS Gate-to-Source Vo.

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SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Ta= 25 PD Power Dissipation @Ta= 70 Linear Derating Factor Single Pulse Avalanche Energy *2 EAS Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.