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KRLML6402 - Power MOSFET

Key Features

  • s.
  • Ultra low on-resistance.
  • P-Channel MOSFET.
  • SOT-23 Footprint.
  • Low profile(＜1.1mm).
  • Available in tape and reel.
  • Fast switching. +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11.. BGasae te 22.ESmoituterrce 33.. cDollreactionr.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-to-sou.

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SMD Type HEXFET Power MOSFET KRLML6402 MOSFET ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. ● Fast switching. +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-to-source voltage VGS ±12 Continuous drain curent,VGS@-4.5V , TA=25℃ Continuous drain curent,VGS@-4.5V , TA=70℃ -3.7 ID -2.2 Pulsed drain current *1 IDM -22 Power dissipation Power dissipation @TA=25℃ @TA=70℃ 1.3 PD 0.8 Linear derating factor 0.