KTS2003 Datasheet | Kexin Semiconductor

Features Low ON resistance. 2.5V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current(pulse) - 1 Allowable Power Dissipation - 2 Channel Temperature Storage Temperature - 1 PW 10 s, duty cycle 1% Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 20 10 4 25 1.3 150 -55 to +150 Unit V V A A W - 2 Mounted on a ceramic board (1000mm2X0.8mm) .kexin..cn .. SMD Type Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source "Miller" Charge Gate-Drain Charge Diode Forward Voltage Symbol Testconditons Min 20 10 10 0.4 7 10 38 50 500 280 150 20 See Specified Test Circuit 200 80 150 VDS= 10 V VGS = 10 V ID = 4 A IF = 4 A, VGS = 0 V 22 3 3 0.82 1.2 50 70 1.3 Typ Max IC IC Unit V A A V S m m p F p F p F ns ns ns ns n C n C n C V V(BR)DSS ID=1m A, VGS=0 IDSS IGSS VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 m A Yfs VDS = 10 V, ID = 4 A RDS(on)1 VGS = 4 V, ID = 4A RDS(on)2 VGS = 2.5 V, ID = 2 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS = 10 V VGS = 0 V f = 1 MHz Switching Time Test Circuit .kexin..cn...