KTS2005 Datasheet | Kexin Semiconductor

Features Low ON resistance. Ultrahigh-speed switching. Mounting height 1.1mm. Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current(pulse) - 1 Allowable Power Dissipation - 2 Channel Temperature Storage Temperature - 1 PW 10 s, duty cycle 1% Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 100 20 2 8 1.3 150 -55 to +150 Unit V V A A W - 2 Mounted on a ceramic board (1000mm2X0.8mm) .kexin..cn .. SMD Type Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Testconditons Min 100 10 10 1.0 4 5.6 0.2 0.22 0.3 520 VDS =20 V,f = 1 MHz 100 15 10 See Specified Test Circuit 4 80 35 IS= 2A, VGS = 0 V 0.8 1.2 0.26 0.33 0.6 2.0 Typ Max IC IC Unit V A A V S V(BR)DSS ID=1m A, VGS=0 IDSS IGSS VDS = 100 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 m A Yfs VDS = 10 V, ID = 2 A RDS(on)1 VGS = 10 V, ID = 2A Drain to Source On-state Resistance RDS(on)2 VGS = 4 V, ID = 2A RDS(on)3 VGS = 3V, ID = 1A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf VSD p F p F p F ns ns ns ns V Switching Time Test Circuit .kexin..cn...