KX10N60F
KX10N60F is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 600V
- ID = 10 A (VGS = 10V)
- RDS(ON) ＜ 730mΩ (VGS = 10V)
- Qg(typ.)= 29.5n C
N-Channel MOSFET
TO-220F
±0.20
3.18±0.20 φ
±0.20
2.54 ±0.20
6.68 ±0.20
15.87 ±0.20 3.30 ±0.20
12.42 ±0.20
1.47max
9.75 ±0.20
0.50 ±0.20
2.54typ 2.54typ
0.80 ±0.20
Unit: mm 0.70 ±0.20
2.76 ±0.20
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃ Tc=70℃
Pulsed Drain Current
(Note.1)
Power Dissipation Repetitive Avalanche Energy
Tc=25℃ Derate above 25℃ (Note.2)
Single Pulsed Avalanche Energy (Note.1)
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction-...
