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KX10N60F - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 10 A (VGS = 10V).
  • RDS(ON) ＜ 730mΩ (VGS = 10V).
  • Qg(typ. )= 29.5nC N-Channel MOSFET KX10N60F TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 1 1.47max 23 9.75 ±0.20 D 0.50 ±0.20 2.54typ 2.54typ 0.80 ±0.20 Unit: mm 0.70 ±0.20 2.76 ±0.20 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=70℃ Pulsed Drain Current (.

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DIP Type MOSFET ■ Features ● VDS (V) = 600V ● ID = 10 A (VGS = 10V) ● RDS(ON) ＜ 730mΩ (VGS = 10V) ● Qg(typ.)= 29.5nC N-Channel MOSFET KX10N60F TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 1 1.47max 23 9.75 ±0.20 D 0.50 ±0.20 2.54typ 2.54typ 0.80 ±0.20 Unit: mm 0.70 ±0.20 2.76 ±0.20 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=70℃ Pulsed Drain Current (Note.1) Power Dissipation Repetitive Avalanche Energy Tc=25℃ Derate above 25℃ (Note.2) Single Pulsed Avalanche Energy (Note.1) Peak Diode Recovery dv/dt (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.