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KX12N65F - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 650V.
  • ID = 12 A (VGS = 10V).
  • RDS(ON) ＜ 850mΩ (VGS = 10V).
  • High ruggedness D G S TO-220F 10.16 0.20 (7.00) ø3.18 0.10 Unit:mm 2.54 0.20 (0.70) 3.30 0.10 6.68 0.20 15.87 0.20 15.80 0.20 9.75 0.30 (1.00x45 ) 12 MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 0.20] 3 (30 ) 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.50 +0.10.
  • 0.05 2.76 0.20 1. Gate 2. Drain 3. Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-So.

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DIP Type MOSFET N-Channel MOSFET KX12N65F ■ Features ● VDS (V) = 650V ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 850mΩ (VGS = 10V) ● High ruggedness D G S TO-220F 10.16 0.20 (7.00) ø3.18 0.10 Unit:mm 2.54 0.20 (0.70) 3.30 0.10 6.68 0.20 15.87 0.20 15.80 0.20 9.75 0.30 (1.00x45 ) 12 MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 0.20] 3 (30 ) 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.50 +0.10 –0.05 2.76 0.20 1. Gate 2. Drain 3. Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Tc=25℃ Tc=100℃ Power Dissipation Derating Factor above 25oC Tc=25℃ Single pulsed Avalanche Energy (Note.2) Repetitive Avalanche Energy (Note.1) Peak diode Recovery dv/dt (Note.