KX12N65F
KX12N65F is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 650V
- ID = 12 A (VGS = 10V)
- RDS(ON) ＜ 850mΩ (VGS = 10V)
- High ruggedness
TO-220F
10.16 0.20 (7.00)
ø3.18 0.10
Unit:mm
2.54 0.20 (0.70)
3.30 0.10
6.68 0.20 15.87 0.20
15.80 0.20
9.75 0.30
(1.00x45 )
MAX1.47 0.80 0.10
#1 0.35 0.10 2.54TYP [2.54 0.20]
(30 )
2.54TYP [2.54 0.20]
9.40 0.20
4.70 0.20
+0.10
- 0.05
2.76 0.20
1. Gate 2. Drain 3. Source
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Tc=25℃ Tc=100℃
Power Dissipation Derating Factor above 25o...
