KX4N15DY Datasheet | Kexin Semiconductor

Features - VDS =150V,ID =5.2A - RDS(ON) <44mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses SOP-8 +0.04 0.21 -0.02 Tra Mn Osi Ss Fto Ers T 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings (TA = 25℃, unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Thermal Resistance.Junction- to-Case (Note 2) Junction Temperature Storage Temperature Range TC = 25℃ TC = 100℃ IDM PD Rth JC TJ Tstg Rating 150 ±20 5.2 3.7 42 3.5 35.7 150 -55 to 150 Unit V W ℃/W ℃ .kexin..cn 1 SMD Type N-Channel MOSFET KX4N15DY - Electrical Characteristics (TA = 25℃, unless otherwise specified) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V Zero Gate Voltage Drain...