KX4N60
KX4N60 is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
ƽ VDS S = 600V ƽ ID = 4.0 A ƽ Rdson < 2.5വ(Vgs=10V) ƽ Low gate charge ƽ Low Crss (typical 14p F ) ƽ Fast switching ƽ 100% avalanche tested ƽ Improved dv/dt capability ƽ Ro HS product
MOSFET
N-Channel MOSFET KX4N60
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
4.50 ± 0.20
+0.10
- 0.05
2.80 ± 0.10
(1.70) 1.30 ± 0.10
(3.00) (3.70) 15.90 ± 0.20 18.95MAX.
9.20 ± 0.20 (1.46)
(45 )
10.08 ± 0.30
13.08 ± 0.20 (1.00)
1.27 ± 0.10
1.52 ± 0.10
2.54TYP [2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP [2.54 ± 0.20 ]
10.00 ± 0.20
+0.10
- 0.05
2.40 ± 0.20
1 GATE 2 DRAIN 3 SOURCE
Ƶ Absolute Maximum Ratings (TC = 25ć)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25ć TC = 100ć
Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche energy, t AR limited by Tjmax (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25ć)
Derate above 25°C Thermal Resistance, Junction- to-Case Thermal Resistance, Junction- to-Ambient Junction Temperature Storage Temperature Range Note 1: Pulse width limited by maximum junction temperature Note 2: L=25m H, IAS=4.0A, VDD=50V, RG=25 വ,Starting TJ=25ć Note 3: ISD İ4.0A,di/dt İ200A/μs,VDDİBVDSS, Starting TJ=25ć
Symbol VDS...
