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KX4N60 Datasheet N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: DIP Type Ƶ.

Key Features

  • ƽ VDS S = 600V ƽ ID = 4.0 A ƽ Rdson < 2.5വ(Vgs=10V) ƽ Low gate charge ƽ Low Crss (typical 14pF ) ƽ Fast switching ƽ 100% avalanche tested ƽ Improved dv/dt capability ƽ RoHS product MOSFET N-Channel MOSFET KX4N60 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10.
  • 0.05 2.80 ± 0.10 (1.70) 1.30 ± 0.10 (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 9.20 ± 0.20 (1.46) (45 ) 10.08 ± 0.30 13.08 ± 0.20 (1.00) 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54.

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