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MCH3476 - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 20V ƽ ID = 2.0 A ƽ RDS(ON) ˘ 125m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 190m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 310m¡ (VGS = 1.8V) ƽ 1.8V Drive ƽ ESD Diode-Protected Gate 3 1 2 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current PWİ10ȝs, duty cycleİ1% Power Dissipation.
  • 1 Thermal Resistance. Junction- to-Ambient.
  • 1 Junction Temperature Storage Temperature Range.

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SMD Type N-Channel MOSFET MCH3476 Ƶ Features ƽ VDS (V) = 20V ƽ ID = 2.0 A ƽ RDS(ON) ˘ 125m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 190m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 310m¡ (VGS = 1.8V) ƽ 1.8V Drive ƽ ESD Diode-Protected Gate 3 1 2 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current PWİ10ȝs, duty cycleİ1% Power Dissipation *1 Thermal Resistance.Junction- to-Ambient *1 Junction Temperature Storage Temperature Range *1: When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol VDS VGS ID IDP PD RthJA TJ Tstg Rating 20 ±12 2 8 0.8 156.2 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.