Kexin Electronics MCH3476
N-Channel MOSFET
FEATURES
ƽ VDS (V) = 20V ƽ ID = 2.0 A ƽ RDS(ON) ˘ 125m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 190m¡ (VGS = 2.5V) ƽ RDS(ON) ˘ 310m¡ (VGS = 1.8V) ƽ 1.8V Drive ƽ ESD Diode-Protected Gate 3 1 2 TraMnOsiSsFtoErsT 1.Gate 2.Source 3.Drain ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current PWİ10ȝs, duty cycleİ1% Power Dissipation *1 Thermal Resistance.Junction- to-Ambient *1 Junction Temperature Storage Temperature Range *1: When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol VDS VGS ID IDP PD RthJA TJ Tstg Rating 20 ±12 2 8 0.8 156.2 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type N-Channel MOSFET MCH3476 ƵELECTRICAL CHARACTERISTICS
Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance T...