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MCH3476 - Power MOSFET

Features

  • Low On-Resistance.
  • 1.8V Drive.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 125mΩ@ 4.5V 190mΩ@ 2.5V 310mΩ@ 1.8V ID Max 2A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Te.

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Datasheet Details

Part number MCH3476
Manufacturer ON Semiconductor
File Size 580.65 KB
Description Power MOSFET
Datasheet download datasheet MCH3476 Datasheet
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Full PDF Text Transcription

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MCH3476 Power MOSFET 20V, 125mΩ, 2A, Single N-Channel www.onsemi.com Features • Low On-Resistance • 1.8V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 125mΩ@ 4.5V 190mΩ@ 2.5V 310mΩ@ 1.8V ID Max 2A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value 20 ±12 2 8 Unit V V A A 0.8 150 −55 to +150 W °C °C Value Unit 156.
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