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MDD1904 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 10.8 A (VGS = 10V).
  • RDS(ON) ＜ 140mΩ (VGS = 10V).
  • RDS(ON) ＜ 150mΩ (VGS = 6V) D +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-.

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SMD Type N-Channel MOSFET MDD1904 (KDD1904) MOSFET ■ Features ● VDS (V) = 100V ● ID = 10.8 A (VGS = 10V) ● RDS(ON) ＜ 140mΩ (VGS = 10V) ● RDS(ON) ＜ 150mΩ (VGS = 6V) D +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Tc=25℃ Tc=70℃ (Note.1) Power Dissipation Tc=25℃ Tc=70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.