Kexin Electronics MDD1904
N-Channel MOSFET
| Part No. | MDD1904 |
|---|---|
| Datasheet | MDD1904 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 100V● ID = 10.8 A (VGS = 10V)
● RDS(ON) ＜ 140mΩ (VGS = 10V)
● RDS(ON) ＜ 150mΩ (VGS = 6V) D +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Tc=25℃ Tc=70℃ (Note.1) Power Dissipation Tc=25℃ Tc=70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 100 ±20 10.8 8.7 25 12.5 35.8 22.9 52 3.5 150 -55 to 150 Note.1: EAS is tested at starting Tj=25℃, L=1mH, IAS=5A, VDD=50V, VGS=10V Unit V A mJ W ℃/W ℃ 1 SMD Type N-Channel MOSFET MDD1904 (KDD1904)● Elect...
