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MDD1904 - Single N-channel MOSFET

Datasheet Summary

Description

The MDD1904 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1904 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 100V  ID = 10.8A @VGS = 10V  RDS(ON) (MAX) < 140mΩ @VGS = 10V < 150mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance,.

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Datasheet Details

Part number MDD1904
Manufacturer MagnaChip
File Size 1.03 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDD1904 Datasheet
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MDD1904 – Single N-Channel Trench MOSFET 100V MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140mΩ ㄹ General Description The MDD1904 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 10.8A @VGS = 10V  RDS(ON) (MAX) < 140mΩ @VGS = 10V < 150mΩ @VGS = 6.
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