MMBT3906T Datasheet | Kexin Semiconductor

Features - Epitaxial Planar Die Construction - Also Available in Lead Free Version - plementary to MMBT3904T SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 + 0.75 0.05 -0.05 + 0.8 0.1 -0.1 1. Base 2. Emitter 3. Collecter - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating -40 -40 -5 -200 150 833 150 -55 to 150 Unit V m A m W °C/W ℃ .kexin..cn 1 SMD Type Transistors PNP Transistors MMBT3906T (KMBT3906T) - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation...