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NTA4151P - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-760m A (VGS =-4.5V).
  • RDS(ON) ＜ 260mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 350mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 490mΩ (VGS =-1.8V) P-Channel MOSFET NTA4151P SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 + 1.6 0.15 -0.15 3 D 0.3±0.05 0.5 +0.1 -0.1 G S + 0.75 0.05 -0.05 + 0.8 0.1 -0.1 0.55 (REF. ) 0.36±0.1 U nit: m m 0.15±0.05 1.Gate 2.Source 3.Drain 0.8±0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage G.

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SMD Type MOSFET ■ Features ● VDS (V) =-20V ● ID =-760m A (VGS =-4.5V) ● RDS(ON) ＜ 260mΩ (VGS =-4.5V) ● RDS(ON) ＜ 350mΩ (VGS =-2.5V) ● RDS(ON) ＜ 490mΩ (VGS =-1.8V) P-Channel MOSFET NTA4151P SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 + 1.6 0.15 -0.15 3 D 0.3±0.05 0.5 +0.1 -0.1 G S + 0.75 0.05 -0.05 + 0.8 0.1 -0.1 0.55 (REF.) 0.36±0.1 U nit: m m 0.15±0.05 1.Gate 2.Source 3.Drain 0.8±0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Gate−to−Source ESD Rating − (Human Body Model, Method 3015) Continuous Drain Current Pulsed Drain Current @ tp =10 us Power Dissipation Thermal Resistance.