Datasheet4U Logo Datasheet4U.com

NTA4153N - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 915mA.
  • RDS(ON) ＜ 230mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 275mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 700mΩ (VGS = 1.8V).
  • RDS(ON) ＜ 950mΩ (VGS = 1.5V) SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF. ) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1 Gate 2 Source 3 Drain 3 1 2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Co.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTA4153N Small Signal MOSFET On Semiconductor
NTA4151P P-Channel MOSFET On Semiconductor
NTA4001N N-Channel Power MOSFET ON Semiconductor
NTA4015N Small Signal MOSFET ON Semiconductor
NTA0303MC Isolated 1W Dual Output SM DC/DC Converters Murata

Other Datasheets by Kexin Semiconductor

Part Number Description
NTA4151P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET N-Channel MOSFET NTA4153N ■ Features ● VDS (V) = 20V ● ID = 915mA ● RDS(ON) ＜ 230mΩ (VGS = 4.5V) ● RDS(ON) ＜ 275mΩ (VGS = 2.5V) ● RDS(ON) ＜ 700mΩ (VGS = 1.8V) ● RDS(ON) ＜ 950mΩ (VGS = 1.5V) SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1 Gate 2 Source 3 Drain 3 1 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.