Kexin Electronics NTA4153N
N-Channel MOSFET
FEATURES
● VDS (V) = 20V● ID = 915mA
● RDS(ON) < 230mΩ (VGS = 4.5V)
● RDS(ON) < 275mΩ (VGS = 2.5V)
● RDS(ON) < 700mΩ (VGS = 1.8V)
● RDS(ON) < 950mΩ (VGS = 1.5V) SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 + 0.8 0.1 -0.1 1 Gate 2 Source 3 Drain 3 1 2
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Ta=25℃ Ta=85℃ tp =10us Steady State Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TL TJ Tstg Rating 20 ±6 915 660 1.3 300 416 260 150 -55 to 150 Unit V mA A mW ℃/W ℃ 1 SMD Type N-Channel MOSFET NTA4153N●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Lea...