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NTR1P02LT1 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-1.3 A.
  • RDS(ON) ＜ 220mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 350mΩ (VGS =-2.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate 0-0.1 +0.1 0.38 -0.1 D 2. Source 3. Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Re.

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SMD Type P-Channel MOSFET NTR1P02LT1 (KTR1P02LT1) ■ Features ● VDS (V) =-20V ● ID =-1.3 A ● RDS(ON) ＜ 220mΩ (VGS =-4.5V) ● RDS(ON) ＜ 350mΩ (VGS =-2.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate 0-0.1 +0.1 0.38 -0.1 D 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -20 ±12 -1.3 -4 0.4 300 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.